发明名称 WASTE GAS TREATMENT AND TREATING DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a waste gas treating technology by which a waste gas exhausted from a semiconductor manufacturing process or the like is treated to decompose and remove a harmful material and a pollutant contained in the gas. SOLUTION: In a vacuum atmosphere A between plasma electrodes 20, 21, by generating plasma, while a waste gas exhausted from a semiconductor manufacturing process or the like is mixed with a reaction promoting gas, constituents in the waste gas are excited and activated together with the reaction promoting gas to react and on the electrode surface of the plasma electrodes 20, 21, they are deposited and solidified as a plasma reaction product. In this way, a harmful material and a pollutant in the waste gas are decomposed and removed.</p>
申请公布号 JPH115012(A) 申请公布日期 1999.01.12
申请号 JP19970176536 申请日期 1997.06.16
申请人 INOUE KENJI;SUGAI:KK 发明人 INOUE KENJI
分类号 B01D53/34;B01D53/32;B01D53/46;B01D53/68;B01J19/08;(IPC1-7):B01D53/32 主分类号 B01D53/34
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