发明名称 INSULATED GATE BIPOLAR TRANSISTOR OPERATED BY PHOTOELECTRIC CONVERSION ELEMENT
摘要 <p>PROBLEM TO BE SOLVED: To provide an insulated gate bipolar transistor operated by a photoelectric conversion element for ensuring a normal operation of this transistor with a low-voltage signal source. SOLUTION: This transistor is provided with a light-emitting element L101 connected to an a-c or d-c power source for converting a low-voltage signal into optical energy and photoelectric conversion element PE101 for converting the optical energy into electrical energy for generating a high-voltage weak- current signal against that element L101, the conversion element PE101 being connected parallel to the gate and emitter of the insulated gate bipolar transistor.</p>
申请公布号 JPH118380(A) 申请公布日期 1999.01.12
申请号 JP19970146291 申请日期 1997.06.04
申请人 TAI-HAA YAN 发明人 TAI HAA YAN
分类号 H01L31/10;H01L29/739;H01L29/78;H01L31/12;H03K17/785;(IPC1-7):H01L29/78 主分类号 H01L31/10
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