| 摘要 |
<p>PROBLEM TO BE SOLVED: To destaticize with an electricity elimination pattern with an identical electricity elimination voltage and application time, even if the surface roughness and type of a wafer change by setting the average value of the sum of the maximum surface roughness of an insulation film and a wafer to a specific value range. SOLUTION: When a wafer is to be attracted on a static electricity attraction electrode 15 at the start of an etching treatment, a switch is connected to a terminal while plasma is being generated and a DC voltage is applied to the static electricity attraction electrode 15 by a DC power supply. Also, when the wafer is to e released from the static electricity attraction electrode 15 after the etching treatment has been completed, the switch is connected to the terminal, while plasma is being generated and a DC voltage with an opposite polarity from attraction is applied to the static electricity attraction electrode 15 for a constant time interval by a DC power supply. IN this case, the average value of the sum of each maximum surface roughness of the contacting surface between the surface of an insulation film 14 and the wafer reverse side is set to 3.5-5.5μm or the sum of the maximum surface roughness is set within the range of 7.0-11.0μm, thus eliminating electricity with an identical destaticize pattern, even if the surface roughness and type of the wafer changes.</p> |
