发明名称 THIN FILM GROWING EQUIPMENT
摘要 <p>PROBLEM TO BE SOLVED: To provide a thin film growing equipment with which the heat on the plane of a wafer can be equalized by a simple means. SOLUTION: A groove-like heat insulating part 8 is provided between the circumferential part, which comes in contact with a susceptor 2 on the backside of a wafer tray 60, and the circumferential part of a wafer placing part 5, and when the wafer tray 10 is housed in the susceptor 2, a gap is formed by the heat insulating part 8 between the susceptor 2 and the wafer tray 10. Accordingly, the dispersion of heat to the susceptor 2 from the circumferential part of the wafer placing part 5 can be suppressed, and the temperature of the wafer surface can also be maintained uniformly.</p>
申请公布号 JPH118199(A) 申请公布日期 1999.01.12
申请号 JP19970159612 申请日期 1997.06.17
申请人 JAPAN ENERGY CORP 发明人 ARAMAKI SATOSHI;KANEDA WATARU
分类号 C30B25/12;C23C16/46;H01L21/205;H01L21/68;H01L21/683;(IPC1-7):H01L21/205 主分类号 C30B25/12
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