| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element improved to solve such the increase of the coverage of the light-emitting part with its electrodes or the decrease of the light emission intensity. SOLUTION: This element comprises a first conductivity-type semiconductor layer 2 formed on a substrate 1, reverse conductivity-type semiconductor layer 3 laminated on that layer 2 so as to expose a part thereof, and a first electrode 5 formed on this exposed part. A part facing this electrode 5 and connection part of a second electrode 6 are made recessed, protrudent or roughened and the parts thus formed are set to 22-52 μm lengths. |
