| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor light-emitting device which is superior in luminance efficiency, temperature characteristic, and electrical properties by a method, wherein a clad layer and an active layer which are both formed of first conductivity-type III-V compound semiconductor and a clad layer of second conductivity-type II-VI compound semiconductor are laminated on a substrate. SOLUTION: An n-type III-V compound semiconductor clad layer 12, an undoped III-V compound semiconductor active layer 13, and a p-type II-VI compound semiconductor clad layer 14 are successively laminated on an n-type III-V compound semiconductor substrate 11 through an organic metal vapor growth method. The p-type II-VI compound semiconductor clad layer 14 is grown at temperatures lower than that of the III-V compound semiconductor clad layer 12 and the undoped III-V compound semiconductor active layer 13 and superior in crystallinity. Therefore, a semiconductor light-emitting device of this constitution is capable of effectively performing optical and carrier confinement, so that it is superior in luminance efficiency, temperature characteristic, and electrical properties. |
