| 摘要 |
PROBLEM TO BE SOLVED: To enhance a film enduring rate at the time of forming a lone pattern, development contrast on exposed areas and non-exposed areas, resolution, exposure latitude, and sectional forms, and to enable it to form a good resist pattern by incorporating an alkali-soluble resin and a specified compound having a hydroxyl group esterified by a quinonediazidosulfonic acid. SOLUTION: This positive photoresist composition comprises the alkali-soluble resin, and the compound having a part or all the hydroxyl groups to be esterified with the quinonediazidosulfonic acid, and this compound is represented by the formula in which each of R<1> and R<2> is, independently, an 1-5C alkyl group; and (a) is 0 or 1. This quinonediazido compound of the formula is superior in an effect of restraining a pattern thinning phenomenon due to defocusing on the negative side of the focus even by the BARC method. |
