| 摘要 |
PROBLEM TO BE SOLVED: To simplify the manufacturing process and facilitate forming a fine structure by providing openings on a first conductive layer, so that the side faces of the openings include those of a second conductive layer and those of insulator layer. SOLUTION: On a semiconductor substrate 1 a first wiring layer 2 and a first layer insulation film 3 are formed. On this film 3 second wiring layers 4a, 4b, a second layer insulation film 3, third wiring layers 6a, 6b, a passivation film 7, and a buffer coat layer 8 are formed. On the wiring layer 2 first and second openings 100, 200 are formed. The side faces of the first openings 100 include those of the layer insulation films 3, 5. This permits the wiring layers 6a, 6b to be used as a mask for forming the first openings 100, hence eliminating the need for forming a resist pattern for etching. |
