Annealing methods for forming isolation trenches

摘要

A method for forming a microelectronic structure includes the steps of forming a mask layer on a substrate, forming a trench in the exposed portion of the substrate, forming a layer of an insulating material which fills the trench and covers the mask layer, and annealing the insulating material at a temperature of at least about 1,150 DEG C. The annealing step can be performed for a period of time of about .5 hours to about 8 hours, and the annealing step can be performed in an inert atmosphere.