发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE WITH SURFACE INCLINATION DETECTING APPARATUS AND PROCESS THEREOF
摘要 <p>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device provided with a surface inclination detecting apparatus, with which surface inclination can be detected in a short period, and a surface inclination detecting process. SOLUTION: This surface inclination detecting apparatus which detects the inclination of the surface W to be detected against the prescribed reference surface (X-Y plane, for example) is provided with irradiation optical systems 111 to 114, with which a light is applied to the first detection point 101 on the surface W to be detected, reirradiation optical systems 116, 201 to 206 and 117, which lead the light reflected by the first detection point 101 to the second detection point 102 on the surface W to be detected, photoelectric systems 123 and 124 with which the light reflected by the second detection point 102 on the surface W to be detected is condensed on a light receiving surface, and photoelectric detection parts 126 to 128 which photoelectrically detect the displacement of the light received by the above-mentioned light receiving surface. The information of the first detection point 101 and the second detection point 102 can be given to the light projected from the irradiation optical system, and the inclination of the surface to be detected can be computed by the above-mentioned light.</p>
申请公布号 JPH118193(A) 申请公布日期 1999.01.12
申请号 JP19980048821 申请日期 1998.02.13
申请人 NIKON CORP 发明人 KATO MASANORI
分类号 G01B11/26;G03F7/20;G03F9/00;H01L21/027;H01L21/68;(IPC1-7):H01L21/027 主分类号 G01B11/26
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