发明名称 |
Dark current reducing guard ring |
摘要 |
A photodiode is provided. The photodiode includes an insulative region (IR) that permits passage of light therethrough. The photodiode also includes a substrate region of a first conductivity type and a well region of a second conductivity type. The well is formed within the substrate, beneath the IR. The well is demarcated from the substrate by a first surface. The photodiode further includes a heavily doped region (HDR) of the second conductivity type. The HDR is formed within the IR at a first position. The first surface meets the HDR at substantially the first position.
|
申请公布号 |
US5859450(A) |
申请公布日期 |
1999.01.12 |
申请号 |
US19970941800 |
申请日期 |
1997.09.30 |
申请人 |
INTEL CORPORATION |
发明人 |
CLARK, LAWRENCE T.;BEILEY, MARK A. |
分类号 |
H01L27/14;H01L27/146;H01L31/062;H01L31/10;H01L31/113;(IPC1-7):H01L27/148 |
主分类号 |
H01L27/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|