发明名称 |
Method for growing a semiconductor single-crystal |
摘要 |
A system for growing high-quality, low-carbon-concentration single crystals which have an excellent gas-flow guiding function near the melt, containing 1) an inverted conical, flow-guide cover placed above and coaxially with a double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the single crystal to be grown and the inner surface of the sidewall of the inner crucible; 2) a short passage comprising a hole passing through the sidewall of the inner crucible at a position higher than the level of the melt; and 3) a flow guide cylinder placed above and coaxially with the double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the sidewall of the inner crucible and the inner surface of the sidewall of the outer crucible, all arranged in a furnace.
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申请公布号 |
US5858085(A) |
申请公布日期 |
1999.01.12 |
申请号 |
US19970864721 |
申请日期 |
1997.05.28 |
申请人 |
MITSUBISHI MATERIALS CORPORATION;MITSUBISHI MATERIALS SILICON CORPORATION |
发明人 |
ARAI, YOSHIAKI;ABE, KEISEI;MACHIDA, NORIHISA |
分类号 |
C30B15/00;C30B15/12;C30B15/14;H01L21/208;(IPC1-7):C30B15/00 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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