Optoelectronic diode and component containing same

摘要

PCT No. PCT/DE95/00422 Sec. 371 Date Sep. 26, 1996 Sec. 102(e) Date Sep. 26, 1996 PCT Filed Mar. 28, 1995 PCT Pub. No. WO95/26572 PCT Pub. Date Oct. 5, 1995An optoelectronic component has an Al2O3 or Si substrate having a surface on which a buried CoSi2 layer is provided, a Si layer overlying the buried CoSi2 layer. A metal layer on a portion of this latter Si layer forms a diode between the metal layer, the underlying portion of the Si layer and the buried CoSi2 layer and a waveguide for a transparent portion of the metal layer delivers photon energy to the underlying portion of the Si layer.