发明名称 |
Method of making an inverse-T tungsten gate |
摘要 |
A technique for fabricating an integrated circuit device 100 using an inverse-T tungsten gate structure 121 overlying a silicided layer 119 is provided. This technique uses steps of forming a high quality gate oxide layer 115 overlying a semiconductor substrate 111. The silicided layer 119 is defined overlying the gate oxide layer 115. The silicided layer 119 does not substantially react to this layer. The technique defines the inverse-T tungsten gate electrode layer 121 overlying the silicided layer 119. A top surface of this gate electrode may also be silicided 127 to further reduce the resistance of this device element.
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申请公布号 |
US5858867(A) |
申请公布日期 |
1999.01.12 |
申请号 |
US19960650530 |
申请日期 |
1996.05.20 |
申请人 |
MOSEL VITELIC, INC. |
发明人 |
HSIA, LIANG-CHOO;CHANG, THOMAS TONG-LONG |
分类号 |
H01L21/28;H01L21/336;H01L29/423;H01L29/49;H01L29/78;(IPC1-7):H01L21/320 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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