LEAD FRAME FOR SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide a lead frame for a resin-sealed semiconductor device with a base from alloys of copper, which does not need expensive Au plating and exhibits good wettability and wire-bond ability and at the same time to provide a method for manufacturing such a lead frame. SOLUTION: A lead frame for a resin-sealed semiconductor device is made of a base 110 from alloys of copper. A layer 120 of Ni or alloys of Ni of 0.5μm or more, a layer 130 of Ag or an alloy of Ag and Pd of 0.0500.5μm, a layer 140 of Pd of 0.05-0.5μm and a layer 150 of Ag or an alloy of Ag and Pd of 5-500Åare formed on the entire or a specified part of the surface 110S of the base 110 from alloys of copper from the nearest to the surface 110S according to the measurement by X-ray photoelectron spectroscopy.