| 摘要 |
An electro-static discharge (ESD) protection circuit for a semiconductor device includes a primary ESD protection circuit including at least two diodes, the primary ESD protection circuit being located between a positive voltage and a negative voltage, and connected to input/output terminals of the semiconductor device, the primary ESD protection circuit bypassing any static electricity applied from the input/output terminals; and a secondary ESD protection circuit connected to the primary ESD protection circuit in parallel, the secondary ESD protection circuit including at least two diodes.
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