| 摘要 |
In the production of quantum dots of III-V compound semiconductor in the Stranski-Krastanow growth mode by MOCVD, the novelty is that, after epitaxy of the quantum dots during growth interruption by switching off the group III component, the group V component process gas is also switched off. Preferably, the quantum dots consist of two InxGa1-xAs layers, the first having an In concentration (x) of 0.3-1.0 and the second having the same or lower In concentration, and, after deposition of the second layer, a second growth interruption is provided before epitaxy of further cover layers. |
| 申请人 |
HEINRICHSDORFF, FRANK, 10997 BERLIN, DE;KROST, ALOIS, DR., 13587 BERLIN, DE;BIMBERG, DIETER, PROF. DR., 14089 BERLIN, DE |
发明人 |
HEINRICHSDORFF, FRANK, 10997 BERLIN, DE;KROST, ALOIS, DR., 13587 BERLIN, DE;BIMBERG, DIETER, PROF. DR., 14089 BERLIN, DE |
