Integriertes Dünnschichtverfahren zur Erlangung von hohen Ballastwerten für Überlagerungsstrukturen,申请号DE19936022226-传众专利搜索

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发明名称	Integriertes Dünnschichtverfahren zur Erlangung von hohen Ballastwerten für Überlagerungsstrukturen
摘要
申请公布号	DE69322226(D1)	申请公布日期	1999.01.07
申请号	DE19936022226	申请日期	1993.09.30
申请人	STMICROELECTRONICS, INC., CARROLLTON, TEX., US	发明人	IMHAUSER, WILLIAM P., AMBLER, PENNSYLVANIA 19002, US
分类号	H01L21/331;H01L29/73;(IPC1-7):H01L29/73	主分类号	H01L21/331
代理机构		代理人
主权项
地址

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