Method to determine metal impurities in semiconductor wafer

摘要

The method involves etching a semiconductor wafer (5) using an etching solution, which is then analysed. The semiconductor wafer is received and centred by a reception unit (4,12) and then transferred to an etching position, so that a determined surface of a side or an edge of the wafer is immersed in the etching solution. The wafer is removed from the etching solution using the reception unit, as soon as a determined etch removal. The etching of the wafer is achieved in two successive stations. The surface of the wafer is etched in one station and the edge of the wafer is etched in the other station. An unused etching solution is inserted into each station.