| 摘要 |
<p>High p-type impurity concentration levels are achieved in Group III nitride semiconductor layers by depositing a nitrogen-rich surface onto a supporting layer while impeding the flow of Group III element reactant. Thereafter, the Group III element source is introduced into the reactor to generate a p-type region having a high impurity concentration. The flow of the reactant from the active nitrogen source is kept below about 300 sccm and the temperature of the reactor is reduced below 1075 °C in order to provide improved surface characteristics.</p> |
