| 摘要 |
<p>A method of manufacturing a semiconductor device, comprising the photolithographic step wherein an exposure distortion measurement mark comprising a pattern which produces approximately the same misalignment as that produced by a pattern formed by an optical reduction projection aligner is formed on a sample by the optical reduction projection aligner and, by using the exposure distortion measurement mark, the distortion produced by the optical reduction projection aligner is determined and, when the pattern is exposed by an electron beam lithographic system, the distortion is corrected.</p> |
