| 摘要 |
<p>A method for fabricating a semiconductor integrated circuit device, which comprises forming an SOG film by spin-coating over the gate electrode (14A) (word line WL) of a memory cell selecting MISFET (Qs) and the gate electrodes (14B, 14C) of a peripheral circuit in a DRAM, sintering the SOG film (24) by heat treatment at 800°C for about 1 min, and leveling a silicon oxide film (25) deposited thereon by CMP, thus improving the performance of filling the microgap between the gate electrodes (14A) (word lines WL) themselves while leveling the insulator film on the gate electrodes (14B, 14C).</p> |
