| 发明名称 |
IMPROVED DEPOSITION OF TUNGSTEN NITRIDE USING PLASMA PRETREATMENT IN A CHEMICAL VAPOR DEPOSITION CHAMBER |
| 摘要 |
A layer of tungsten nitride is deposited on the upper surface of a wafer with improved adhesion. The deposition is performed by first pretreating the wafer with a hydrogen plasma prior to performing tungsten nitride deposition. |
| 申请公布号 |
WO9900830(A1) |
申请公布日期 |
1999.01.07 |
| 申请号 |
WO1998US13305 |
申请日期 |
1998.06.26 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
CHEN, LING;GANGULI, SESHADRI;MAK, ALFRED |
| 分类号 |
C23C16/02;C23C16/14;C23C16/34;C23C16/52;H01L21/28;H01L21/285;H01L21/336;H01L21/768;H01L29/49 |
主分类号 |
C23C16/02 |
| 代理机构 |
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代理人 |
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