Semiconductor device especially bipolar transistor

摘要

A semiconductor device has (a) a first conductivity type dopant region (8, 10), part of which is exposed at a semiconductor substrate (20) surface; (b) a second conductivity type dopant region (13) which is surrounded by the first conductivity type dopant region (8, 10) and part of which is exposed at the substrate surface; (c) first and second electrodes (5, 12) connected to the exposed surfaces of the first and second conductivity type dopant regions, respectively; and (d) an insulating layer (23) sandwiched between the first and second electrodes, the upper end of an adjoining region (22) of the first electrode (5), which is directed towards the second electrode (12), being cut away. Also claimed is a process for producing the above semiconductor device.