发明名称 SEMICONDUCTOR LASER ARRAY
摘要 PROBLEM TO BE SOLVED: To form the diffraction gratings of laser devices in a shorter time by a method wherein the phase shift structure of the diffraction grating which is separately set at a certain amount of phase shift for each laser device is provided at several points inside the resonator of each laser device so as to separately set each laser device at a certain oscillation frequency. SOLUTION: In a laser array device 1, a phase shift structure is provided at three positions inside the diffraction grating of a 300μm resonator, wherein the phase shift structure is ofλ/4 phase shift or -λ/8 phase shift or in terms of a diffraction grating period, half the shift of aλ/4 phase shift structure. That is, the phase shift structures which are located at three positions and of 1/4 period shift or #-1/4 period shift are combined, the structures which become the same when they are reversed in a lateral direction are eliminated, and a first to a sixth semiconductor laser, 2 to 7, are so arranged as to form six combinations of diffraction grating periods.
申请公布号 JPH114043(A) 申请公布日期 1999.01.06
申请号 JP19980102759 申请日期 1998.04.14
申请人 NEC CORP 发明人 SATO KENJI
分类号 H01S5/00;H01S5/026;H01S5/12;(IPC1-7):H01S3/18 主分类号 H01S5/00
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