发明名称 DEPOSITED FILM FORMING DEVICE AND DEPOSITED FILM FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To form the deposited film having few picture defect on the surface of a base body at a high film forming speed with a high productivity, reproducibility and yield by arranging the small diameter of cylindrical base body, having the specified diameter specifying the discharge space volume per unit surface area, within an reaction vessel and executing a plasma CVD method. SOLUTION: The cylindrical base body 203 installed on a cylindrical supporting body 202 is arranged within the cylindrical reaction vessel 201 kept in the prescribed vacuum, a reaction gas is introduced and plasma is generated by a glow discharge. By this way, the reaction gas is excited to form the deposited film on the base body. In the deposited film forming device by the plasma CVD method, the base body diameter (d) cm, the surface areas S cm<2> , the discharge volume V cm<3> are specified to satisfy 1<=d<=6, 5.0<=V/S<=2.5×10, further and preferably 1.0×10<=F/V/S<=5.0×10<2> (F means the total flow quantity of the material gas SC cm), and further T=1.0×10<-5>×PV/F, 5.0×10<-7> <=T/S<=1.0×10<-4> (T means the dwell time second of the material gas and P means the pressure within the reaction vessel Pa).
申请公布号 JPH111777(A) 申请公布日期 1999.01.06
申请号 JP19970205269 申请日期 1997.07.15
申请人 CANON INC 发明人 TAZAWA DAISUKE;NIINO HIROAKI;FURUSHIMA SATOSHI;TSUCHIDA NOBUFUMI
分类号 G03G5/08;C23C16/50;H01L21/205;(IPC1-7):C23C16/50 主分类号 G03G5/08
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