| 摘要 |
PROBLEM TO BE SOLVED: To fix dummy polysilicon gate electrodes in a prescribed potential, by a method wherein a high-melting point metal silicide film is formed in at least each one part of the surfaces of P<+> diffused layers in a dummy element region and at least each one part of the surfaces of the dummy polysilicon gate electrodes, and the diffused layers in the dummy element region and the dummy polysilicon gate electrodes are short-circuited by the metal silicide film. SOLUTION: P<+> diffused layers 11 which are formed in a P-type silicon substrate 1 and are provided in a dummy element region 32 which is unnecessary to the actual operation of an LSI, and P<+> dummy gate electrodes 72 which are respectively formed on at least parts of the region 32 via a gate oxide film 4 and are unnecessary to the actual operation of the LSI, are provided to constitute a semiconductor device. A titanium silicide film 12 is selectively formed in at least each one part of the surfaces of the layers 11 in the region 32 and at least each one part of the surfaces of the electrodes 72, whereby the layers 11 in the region 32 and the electrodes 72 are short-circuited by the titanium silicide film 12. As a result, the electrodes 72 are fixed in a prescribed potential and the stable operation of the LSI is ensured. |
