| 摘要 |
PROBLEM TO BE SOLVED: To protect the chip of the semiconductor integrated device against malfunction and breakage due to incident light even if the light is made incident. SOLUTION: Barrier metal is adhered selectively onto an aluminum electrode part 24 formed on a silicon substrate 21 and a projection electrode 27 is formed on the barrier metal and fixed to a transparent electrode on a glass substrate. On the reverse surface of the silicon substrate 21 of this semiconductor integrated circuit, a reverse-surface light shield metal layer 28 is formed which cuts off light. Consequently, even if light is made incident on the reverse side of the semiconductor chip, the light is cut off by the reverse-surface light shield metal layer 28 and never reaches an active element 22. Thus, the reverse-surface light shield metal layer 28 is able to cut off the light from the reverse surface of the semiconductor chip, so the semiconductor chip is prevented from malfunctioning (illegal character) owing to the photovoltanic effect of the active element 22 and breaking owing to a latch-up state. |
