| 摘要 |
PROBLEM TO BE SOLVED: To prevent a breaking of Al wiring caused by stress migration of semiconductor integrated circuit device. SOLUTION: A dummy stepped structure is formed under an Al wiring and consequently the Al wiring has a three-dimensional bent portion. The bent portion absorbs the extension stress given to the Al wiring and contraction stress which the Al wiring receives. A polysilicon used as a gate electrode material and the like or a lower Al wiring 2 is disposed, through an insulation film 4, on the lower layer of the Al wiring 1 1.2μm or less in line width and 0.5 mm or more in total length of its straight line section. This polysilicon or the lower layers Al wiring 2 little functions about operations of semiconductor electronic circuit. The Al wiring bent three-dimensionaly by the steps of the lower layer can absorb the extension and contraction stresses given to the Al wiring by the upper-layer insulation film 3 and the lower-layer insulation film 4.
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