| 摘要 |
PROBLEM TO BE SOLVED: To correspond to a case when the impurity distribution of a semiconductor substrate is not uniform, while taking quantum mechanical considerations into account in calculation time equal to the simulation of classical theory. SOLUTION: AΔz calculation means 21 finds a difference between inverted layer capacity by classical theory and inserted layer capacity by quantum theory and calculatesΔz with is the thickness of the semiconductor substrate, equivalent to the difference in the inverted layer capacities. A discrete lattice generation means 23 generates a Delaunay-type discrete lattice for the structure of a semiconductor element executing evaluation. An electrical characteristics calculation means 25 sets the density of the trnasmission-type charge of a channel in the semiconductor device at a discrete lattice on the boundary of the insulating film and the semiconductor substrate and at a discrete lattice point in the semiconductor substrate, where a distance from the boundary of the insulating film and the semiconductor substrate is equal or shorter than the storedΔz is set to zero, and the electric characteristic of the semiconductor device is calculated.
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