| 摘要 |
PROBLEM TO BE SOLVED: To make a resistance of an electrode for leading out a base of a vertical bipolar transistor lower, and excellently control the formation of an intrinsic base region. SOLUTION: In a double layer polycrystal silicon structure npn transistor 4 which has a collector region 4C consisting of a collector buried layer 4C1, an intrinsic collector region 4C2 and a collector lead-out layer 4C3, a base region 4B consisting of an intrinsic base region 4B1 and an external base region 4B2 formed on the perimeter thereof, and an emitter region 4E, and wherein an emitter lead-out electrode 8E connected to the emitter region 4E and a base lead-out electrode 8B connected to the external base region 4B2 are formed of polycrystal silicon films, the base lead-out electrode 8B consists of a first electrode layer 8B1 and a second electrode layer 8B2 formed thereon, and boron of about 5×10<19> to 1×10<21> /cm<3> is introduced in the second electrode layer 8B2, and an impurity is not positively introduced in the first electrode layer 8B1 when it deposited to make it a nondoped layer.
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