SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To suppress melting and flowing of an electric conductive substance and to make a proper junctioning condition by a size in the horizontal direction of junctioning upper part of an alkaline proof electric conductive film being more than a size corresponding to a deviation of overlapping which is generated at the time of forming a border-less wiring and being a specific value of the maximum size in the horizontal direction of the junctioning part. SOLUTION: A contact 8 is constituted of a titanium nitride film 8a of alkaline proof which is made by film forming contacting with an interlayer insulating film 7 and an impurity region 3, and a tungsten film 8b which is buried in a recess which is comprised of the titanium nitride film 8a. Here the contact 8 is so formed as the titanium nitride film 8a having a thickness more than 1000 and less than 1500Åto surround the outer peripheral of the contact 8. The film thickness in the horizontal direction has a longer size corresponding to an overlapping deviation of the contact 8 and a metal wiring 9 which is a boarder-less wiring, and is made to be less film thickness than a half of the contact 8 in the horizontal direction.