发明名称 |
Bipolar transistor formed by a high energy ion implantation method |
摘要 |
In an NPN bipolar transistor having a special structure in which each impurity region is formed by ion implantation, a width of a base region is significantly reduced, and therefore, current amplification factor hfe is increased, resulting in improvement in performance thereof. Furthermore, a Bi-CMOS transistor can be manufactured using a CMOS process. The use of the bipolar transistor having a special structure for a driving circuit allows implementation of a driving circuit having large driving force with slight increase in cost.
|
申请公布号 |
US5856218(A) |
申请公布日期 |
1999.01.05 |
申请号 |
US19970851537 |
申请日期 |
1997.05.05 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KINOSHITA, ATSUSHI;WADA, TOMOHISA |
分类号 |
H01L29/73;H01L21/331;H01L21/8249;H01L27/06;H01L29/732;(IPC1-7):H01L21/823 |
主分类号 |
H01L29/73 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|