| 摘要 |
An antifuse fabrication process includes the steps of forming a lower antifuse electrode, forming an insulating layer over the lower antifuse electrode, forming an antifuse aperture in the insulating layer, forming a dielectric antifuse material including a first layer comprising silicon dioxide and a second layer comprising silicon nitride over the antifuse insulating layer, etching the silicon nitride layer to form a small layer of silicon nitride in a region centered over the antifuse aperture, optionally forming a third dielectric antifuse layer comprising silicon dioxide, and forming an upper antifuse electrode. Alternatively, the first, second, and third layers of dielectric antifuse material may be formed and then etched to form a small composite sandwich structure of silicon nitride and silicon dioxide over the first silicon dioxide layer in a region centered over the antifuse aperture prior to forming an upper antifuse electrode.
|
