发明名称 Plasma enhanced CVD apparatus, plasma enhanced processing apparatus and plasma enhanced CVD method
摘要 By forming at least one annular groove in each of electrical insulation members provided between a plasma generating electrode and a processing chamber, the insulation performance of the electrical insulation members are prevented from degradation during deposition of conductive films onto a substrate. The plasma generating electrode is substantially a coil of one turn and provided with a pair of introduction portions passing through a wall of the processing chamber. An insulation ring made of quartz glass is installed between each of the introduction portion and the processing chamber. The insulation ring has a round through hole in the center of a disc and three concentric protrusions, each of which is in the shape of an annulus ring, are formed at one side of the disc (the side exposed in the processing chamber). Two annular grooves are made between the protrusions. Each of the protrusions are 50 mm high, 1 mm thick, and 1 mm wide.
申请公布号 US5855685(A) 申请公布日期 1999.01.05
申请号 US19960720866 申请日期 1996.10.03
申请人 ANELVA CORPORATION 发明人 TOBE, RYOKI;SEKIGUCHI, ATSUSHI;SASAKI, MASAO
分类号 H05H1/46;C23C16/50;C23F4/00;H01J37/32;H01L21/205;H01L21/31;(IPC1-7):H05H1/00 主分类号 H05H1/46
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