发明名称 |
BiCMOS devices |
摘要 |
A BiCMOS process which provides both low voltage (digital) and high voltage (analog) CMOS devices. The high voltage NMOS devices have a compensated drain formed by the NPN and PNP base implants. The PNP base plus the high voltage NMOS drain carrier concentrations are both optimized by adjustment of the two variables N base implant dose and P base implant dose; this determines the NPN base carrier concentration which turns out to provide good NPN characteristics. Low voltage NMOS source and drain implants employ a higher dose and may also be used for the high voltage NMOS source. The NPN emitter doping may also be used for a contact to the high voltage NMOS drain contact.
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申请公布号 |
US5856695(A) |
申请公布日期 |
1999.01.05 |
申请号 |
US19920917635 |
申请日期 |
1992.07.20 |
申请人 |
HARRIS CORPORATION |
发明人 |
ITO, AKIRA;CHURCH, MICHAEL DAVID |
分类号 |
G05F3/30;G11C27/02;H01L21/8249;H01L27/02;H01L27/06;H03F1/52;H03F3/50;H03G1/00;H03K5/15;H03K17/22;H03M1/16;H03M1/36;(IPC1-7):H01L27/02;H01L29/68;H01L29/72 |
主分类号 |
G05F3/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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