| 摘要 |
A spin on insulating coating with ionic barrier properties is formed on a substrate, by mixing a P or B containing material such as phosphazene or borazine with a solution of silsesquioxane, spin coating on a substrate to form a film of pre-determined thickness. The coated film is cured in a step wise manner to drive out the solvents and most of the H and OH groups, with the resulting film having a composition SiONX, where X can be B, P, F and mixtures thereof. The amount of P, B or other elements are predetermined by calculating the solids in the silsesquioxane and adding suitable amount of borazine or phosphazene. The coated and cured film fills and planarizes any topography on the substrate created by etching trenches, forming gate stacks or metal lines. In one of the variation, the substrate has a layer of insulating material disposed thereon prior to the application of the spin-on insulator.
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