发明名称 |
Tungsten silicide/ tungsten polycide anisotropic dry etch process |
摘要 |
A process for anisotropically etching a tungsten silicide or tungsten polycide structure. If the silicide/polycide film has an overlying oxide layer, the insulating layer is removed by a gas mixture composed of CHF3 and C2F6. The WSix silicide layer is then etched in a reactive ion etch using a gas mixture formed from Cl2 and C2F6, with sufficient O2 added to control polymer formation and prevent undercutting of the silicide. The polysilicon layer is then etched using a gas mixture formed from Cl2 and C2F6. The result is a highly anisotropic etch process which preserves the critical dimension of the etched structures. The etch parameters may be varied to produce a tapered sidewall profile for use in the formation of butted contacts without the need for a contact mask.
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申请公布号 |
US5856239(A) |
申请公布日期 |
1999.01.05 |
申请号 |
US19970850573 |
申请日期 |
1997.05.02 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATON |
发明人 |
BASHIR, RASHID;KABIR, ABUL EHSANUL;HEBERT, FRANCOIS |
分类号 |
H01L21/3213;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/3213 |
代理机构 |
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主权项 |
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地址 |
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