发明名称 |
Surface treating method of single crystal |
摘要 |
A surface treating method of single crystals by which single crystals for substrates having finished surfaces showing pit-free and atomic scale step structures are obtained by treating the {100}-plane surfaces of single-crystal SrTiO3 substrates by dissolving two-dimensional-lattice atomic layers forming the surfaces one layer by one layer by using a fluorine-based acidic solution (maintained at >35 DEG C. in temperature and <4 in pH) as a solution A and water as a solution B by alternately immersing the substrates in the substrates in the solution A and B.
|
申请公布号 |
US5855668(A) |
申请公布日期 |
1999.01.05 |
申请号 |
US19950402581 |
申请日期 |
1995.03.13 |
申请人 |
KABUSHIKI KAISHA SHINKOSHA |
发明人 |
KAWASAKI, MASASHI;KOINUMA, HIDEOMI;TAKAHASHI, KAZUHIRO;YONEZAWA, TAKUZO |
分类号 |
C30B33/00;(IPC1-7):C30B31/04 |
主分类号 |
C30B33/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|