发明名称 |
Method of depositing a smooth conformal aluminum film on a refractory metal nitride layer |
摘要 |
A method of forming a conformal aluminum film on a refractory metal nitride layer is provided and includes positioning a substrate having the refractory metal nitride layer thereon within a chemical vapor deposition chamber; establishing a nominal temperature for the substrate; introducing a carrier gas containing a gaseous, metalorganic precursor into the chamber for a time sufficient to form a metallic seed layer; and introducing a carrier gas containing a gaseous aluminum metalorganic precursor into the chamber for a time sufficient to form a conformal aluminum metal film over the metal refractory nitride layer.
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申请公布号 |
US5856236(A) |
申请公布日期 |
1999.01.05 |
申请号 |
US19960663996 |
申请日期 |
1996.06.14 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
LAI, GILBERT;SANDHU, GURTEJ S.;IYER, RAVI;VAARTSTRA, BRIAN A. |
分类号 |
C23C16/02;C23C16/44;H01L21/285;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
C23C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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