| 摘要 |
A plasma thin-film forming apparatus comprises a vacuum vessel, a positive and a negative electrode disposed in the vacuum vessel so that the discharge surfaces may face each other at a required interval, an exhaust means for making a required vacuum condition in the interior of the vacuum vessel, a high-voltage impressing means for generating DC glow discharge by impressing high voltage between the positive and the negative electrode, and a gas-inducting means for supplying metal compound-including gas into the vacuum vessel. The gas-inducting means comprises a flexible holding member gastightly fitted to a sublimation chamber communicating with the vacuum vessel and having a hollow portion therein and a glass container inserted in the hollow portion of the holding member and enclosing a predetermined quantity of crysterized osmium tetraoxide therein. The exhaust means is provided with a material gas-adsorbing means in the exhaust port.
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