发明名称 SEMICONDUCTOR X-RAY DETECTOR WITH X-RAY INFALL ANGLE FROM DETECTOR SIDE
摘要 <p>An X-ray detector with the x-ray infall angle from the detector side is manufactured on a high-ohm substrate of n or p type and is composed on one part of diffused reading stripes (13) of n type doping oriented in the direction of infalling x-rays (S) and surrounded by a diffused area (12) of p type doping or with protecting electrodes over insulating oxide surrounded altogether by a protection ring (11) of n type doping, and on the other part of a detector with diffused area (14) of p type, where the x-ray detector according to the invention is characterised by the fact that the distance (k) between the side line of the infalling radiation and the reading stripe (13) is very small. The detector designed in this way enables the conveying off of the loss current into the protection ring (11) and detection of the useful signal on the reading stripes (13).</p>
申请公布号 SI9700151(A) 申请公布日期 1998.12.31
申请号 SI19970000151 申请日期 1997.06.09
申请人 KRIZAJ DEJAN 发明人 KROIZAJ DEJAN
分类号 G01T1/24;(IPC1-7):G01T1/24 主分类号 G01T1/24
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