A reactive ion etch (RIE) technique includes providing a material layer to be etched and supplying a reactive gas to a vicinity of the material layer. A single electric field is supplied to react the reactive gas with the material layer so as to form volatile byproducts of reactive gas and the material layer. The electric field has a frequency in the range from approximately 1 megahertz (MHz) to approximately 11 megahertz (MHz), for example, approximately 2 MHz. Indium and tin oxides, as well as aluminum and aluminum alloys, are suitable as the material layer.
