Non-volatile ferroelectric memory device equipped with reference voltage generator for exactly regulating reference voltage to the mid point between two logic level and method of reading out data bit therefrom,申请号EP19960115325-传众专利搜索

发明名称	Non-volatile ferroelectric memory device equipped with reference voltage generator for exactly regulating reference voltage to the mid point between two logic level and method of reading out data bit therefrom
摘要
申请公布号	EP0766253(A3)	申请公布日期	1998.12.30
申请号	EP19960115325	申请日期	1996.09.24
申请人	NEC CORPORATION	发明人	KOIKE, HIROKI
分类号	G11C14/00;G11C11/22;H01L21/8242;H01L21/8246;H01L27/10;H01L27/105;H01L27/108;(IPC1-7):G11C11/22	主分类号	G11C14/00
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