发明名称 |
METAL AND METAL SILICIDE NITRIDIZATION IN A HIGH DENSITY, LOW PRESSURE PLASMA REACTOR |
摘要 |
A nitridization process to form a barrier layer on a substrate is described. The nitridization process includes depositing a layer of metal or metal silicide on a surface of the substrate, placing the substrate into a high density, low pressure plasma reactor, introducing into the high density, low pressure plasma reactor a gas including nitrogen, and striking a plasma in the high density, low pressure plasma reactor under conditions that promote nitridization of at least a portion of the layer of metal or metal silicide to produce a composition of metal nitride or metal silicon nitride, respectively. |
申请公布号 |
WO9859366(A1) |
申请公布日期 |
1998.12.30 |
申请号 |
WO1998US12934 |
申请日期 |
1998.06.22 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
YANG, YUN-YEN, JACK;CHEN, CHING-HWA;CHEN, YEA-JER, ARTHUR |
分类号 |
C23C16/56;H01L21/28;H01L21/768 |
主分类号 |
C23C16/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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