发明名称 METAL AND METAL SILICIDE NITRIDIZATION IN A HIGH DENSITY, LOW PRESSURE PLASMA REACTOR
摘要 A nitridization process to form a barrier layer on a substrate is described. The nitridization process includes depositing a layer of metal or metal silicide on a surface of the substrate, placing the substrate into a high density, low pressure plasma reactor, introducing into the high density, low pressure plasma reactor a gas including nitrogen, and striking a plasma in the high density, low pressure plasma reactor under conditions that promote nitridization of at least a portion of the layer of metal or metal silicide to produce a composition of metal nitride or metal silicon nitride, respectively.
申请公布号 WO9859366(A1) 申请公布日期 1998.12.30
申请号 WO1998US12934 申请日期 1998.06.22
申请人 LAM RESEARCH CORPORATION 发明人 YANG, YUN-YEN, JACK;CHEN, CHING-HWA;CHEN, YEA-JER, ARTHUR
分类号 C23C16/56;H01L21/28;H01L21/768 主分类号 C23C16/56
代理机构 代理人
主权项
地址