发明名称 APPARATUS FOR EXPOSING SUBSTRATES TO GAS-PHASE RADICALS
摘要 <p>A reactor for exposing substrates to a gas flow comprising gas-phase radicals to functionalize the substrates. The reactor includes a gas ionizer for generating gas-phase radicals in a flow of supply gas. The resulting ionized gas, including the gas-phase radicals, flows into a gas chamber. The gas chamber includes a substrate support which supports substrate materials so they are exposed to the gas-phase radicals contained within the gas flow. A decay zone is positioned between the substrates and the gas ioniser that allow harmful constituents contained within the flow to decay before reaching the substrates. A blocker is positioned between the gas ionizer and the substrates to prevent harmful ultraviolet radiation from striking the substrates. The gas chamber and substrate support are sized to allow a plurality of substrates to be introduced therein and simultaneously functionalized, permitting the reactor to be used for commercial-scale functionalization of the substrates. In one embodiment, the substrates are repositioned within the gas chamber to account for any gradients in concentration of the gas-phase radicals. In a further embodiment, a barrier within the gas chamber uniformly directs flow over the substrate support to convect the gas-phase radicals in close proximity to the substrates. In yet a further embodiment, a substrate moving device passes a continuous elongated substrate through the reaction zone. In still further embodiments the flow containing gas-phase radicals is directed toward the substrates from above or below the substrates to suspend the substrates in the flow.</p>
申请公布号 WO1998058731(A2) 申请公布日期 1998.12.30
申请号 US1998012170 申请日期 1998.06.22
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