发明名称 Method and circuit for operating a transistor as a rectifier
摘要 Circuits and methods are provided for operating a transistor as rectifier based upon the detected Vds of the transistor. In sensing the Vds voltage of the SRMOS, during positive conduction, the SRMOS body diode will conduct and the Vds of the SRMOS becomes that of a forward body diode voltage, which may, depending on the type of the device, be approximately -0.6V. If this voltage level is sensed, it may indicates that the SRMOS is turned off too early. During reverse conduction, Vds is non-existent (which is similar to a diode). In this case, the SRMOS may be turned off too late. Thus, by examining Vds, the SRMOS can be operated in such a manner so that it is turned off at an optimal point in time.
申请公布号 AU7608498(A) 申请公布日期 1998.12.30
申请号 AU19980076084 申请日期 1998.06.01
申请人 SEMI-TECH DESIGN, INC. 发明人 HSIAN-PEI YEE
分类号 H02M7/21;H02M3/00;H02M3/158;H02M3/335 主分类号 H02M7/21
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