| 摘要 |
There is disclosed a method of manufacturing a silicon monocrystal in accordance with the Czochralski method in which a seed crystal is brought into contact with silicon melt and is then slowly pulled while being rotated in order to grow a silicon monocrystalline ingot below the seed crystal. In the method, there is used a seed crystal whose a tip end to be brought into contact with the silicon melt has a sharp-pointed shape or a truncation thereof. The tip end of the seed crystal is gently brought into contact with the silicon melt, and the seed crystal is then lowered at a low speed in order to melt the tip end portion of the seed crystal until the thickness of the tip portion increases to a desired value. Subsequently, the seed crystal is pulled slowly in order to grow a silicon monocrystalline ingot having a desired diameter without performance of a necking operation. During the growth of the silicon monocrystalline ingot, a part of the crystal is mechanically held. The method completely prevents falling of a monocrystalline ingot being grown which would otherwise occur due to the increased diameter and weight of the ingot. |
