| 摘要 |
A dynamic gain memory cell of a DRAM cell array includes a planar MOS transistor as a selection transistor and a vertical MOS transistor as a memory transistor, which are connected to one another via a common source/drain region. The memory transistor has a gate electrode of doped silicon, which is disposed along at least one side of a trench. In the trench, an oppositely doped silicon structure is provided, which with the gate electrode of the memory transistor forms a diode, which is connected to the common source/drain region via a contact.
|
