发明名称 |
Method of manufacturing a surface-emitting laser |
摘要 |
In a method of fabricating a surface-emitting laser, to assure good electrical confinement and good flatness of the mirrors defining the resonant cavity of the laser an electrical confinement layer is formed by carrying out the following steps: forming an undercut layer, at least one growth step on the undercut layer, forming a mesa defining the shape and the location of the top mirror and exposing the undercut layer on its vertical walls, and controlled lateral etching of the undercut layer. Applications include the fabrication of a semiconductor laser on a III-V (e.g. InP or GaAs) substrate.
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申请公布号 |
US5854088(A) |
申请公布日期 |
1998.12.29 |
申请号 |
US19970885843 |
申请日期 |
1997.06.30 |
申请人 |
ALCATEL ALSTHOM COMPAGNIE GENERALE D'ELECTRICITE |
发明人 |
PLAIS, ANTONINA;SALET, PAUL;JACQUET, JOEL;POINGT, FRANCIS;DEROUIN, ESTELLE |
分类号 |
H01S5/00;H01S5/183;H01S5/20;H01S5/22;(IPC1-7):H01L21/00 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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